Exploration of Monolayer MoS2 Template-Induced Growth of GaN Thin Films via Plasma-Enhanced Atomic Layer Deposition
2021
GaN thin films have been directly grown on monolayer MoS2 by plasma-enhanced atomic layer deposition at 260 °C using triethylgallium as the gallium precursor along with Ar/N2/H2 plasma for the firs...
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