Number and current fluctuations in submicron semiconductor structures

We present an analysis of number and current fluctuations in homogeneous n‐Si resistors of submicron dimensions by employing analytical and Monte Carlo calculations. Results show the presence of long‐time tails in the ballistic regime, which vanish when the length of the sample becomes comparable with the carrier mean‐free‐path. In the diffusive regime different time‐scales related to diffusion, drift, and dielectric relaxation are shown to characterize the behavior of fluctuations.