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THE CONVERGENT EFFECT OF THE ANNEALING TEMPERATURES OF ELECTRON-IRRADIATED DEFECTS IN FZ SILICON GROWN IN HYDROGEN
THE CONVERGENT EFFECT OF THE ANNEALING TEMPERATURES OF ELECTRON-IRRADIATED DEFECTS IN FZ SILICON GROWN IN HYDROGEN
1985
Qin Gg
Hua Zl
Keywords:
Radiochemistry
Irradiation
Annealing (metallurgy)
Hydrogen
Electron
Silicon
Materials science
Correction
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