Crystallopraphic Growth Orientation of Polycrystalline HSG Silicon Film

The purpose of present study is to find out the formation mechanism of hemi-spherical grained(HSG) polysilicon film. Silicon film was deposited using LPCVD. Polycrystalline silicon film was deposited at contained crystalline HSG in the amorphous matrix phase. The crystalline HSG can be categorized into two grains : lower grains and upper grains. Lower grains are located at interface between silicon dioxide and silicon film, and upper grains are located at surface. The growth orientations of HSG were identified as (311) or (111) directions for lower grains and perferentially (110) direction for upper grains. This difference of growth orientations seems to be caused by the difference of formation mechanisms. That is, lower grain is formed by soild phase crystallization, on the other hand, upper grain is formed by surface diffusion of silicon atoms. It was thus, proposed that the formation of practical HSG polysilicon film is mainly controlled by surface diffusion of silicon atoms.