Response of Windowless Silicon Avalanche Photo-Diodes to Electrons in the 90-900 eV Range

We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.149 \pm 0.026$ (for $E_e = 90$ eV) to $385.9 \pm 2.8$ (for $E_e = 900$ eV), when operating the diode at a bias of $V_{apd} = 350$ V.