Very Broadband GaAs HBT RF MIC Power Amplifier

A very broadband GaAs HBT RF monolithic IC power amplifier with working band from DC to 3.5 GHz is developed successfully. An improved circuit structure of Darlington circuit is proposed. The gain of the PA is obviously increased and the temperature effect of the PA is effectively compensated by using this improved circuit. The gain is more than 18 dB. The output power is more than 22 dBm. The noise figure is less than 3.6 dB