Submicrometer InAlAs/InGaAs Double-Gate HEMT’son Transferred Substrate

This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As doublegate HEMTs with sub-micron gate lengths. These devices present a maximum extrinsic transconductance gm of 2650 mS/mm with a corresponding drain current Id equal to 310 mA/mm. This extrinsic transconductance is the highest value ever reported for any transistor. Low output conductance gd is obtained, denoting the reduction of short channel effects. The combined high transconductance and the low output conductance induce an extremely high intrinsic unloaded voltage gain (gm/gd) of 87.