High-Power Single and Power-Combined 180 GHz Schottky Frequency Doublers

This paper presents the results for single and power-combined 180 GHz frequency doublers. The frequency doubler comprising of a single GaAs Schottky diode circuit has a measured peak efficiency of 34% and bandwidth of 11%. At an input power of 500 mW, this single chip generates 109 mW at 180 GHz. In a power-combined configuration with two devices adding in-phase, the device demonstrates 105 mW of output power for 500 mW input and is thus capable of generating more power for higher input power.