Dry Etching of High [Al] AlGaAsSb Compounds Using Cl 2 /N 2 /Ar ICP RIE

Deep dry etching of shallow features in high Al content AlGaAsSb can be achieved using Cl2/N2/Ar chemistries. Good performances are achieved provided that the etching regime (ICP or RIE) is chosen in accordance with the designed geometry and aspect ratio, and devices with good opto-electrical performances were fabricated.