Electroless copper plating solution and an electroless copper plating method

When performing electroless copper plating specular choice, such as plating reaction hardly semiconductor wafer, and an object thereof is to provide a lower temperature with a uniform plating can be achieved electroless copper plating solution. With the first reducing agent as a reducing agent, using a second hypophosphorous acid or hypophosphite as the reducing agent, electroless copper plating, characterized by the use further stabilizers for copper deposition simultaneously suppressed liquid. The first reducing agent, formalin, etc. glyoxylic acid, and examples of the hypophosphite, sodium hypophosphite, potassium hypophosphite, ammonium hypophosphite and the like. Stabilizers for copper deposition suppression 2,2'-bipyridyl, imidazole, nicotinic acid, thiourea, 2-mercaptobenzothiazole, sodium cyanide, and the like thioglycolic acid.