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InGaAs/Si Heterojunction Tunnel FET with Modulation-doped Channel
InGaAs/Si Heterojunction Tunnel FET with Modulation-doped Channel
2016
Katsuhiro Tomioka
Fumiya Ishizaka
Junichi Motohisa
Takashi Fukui
Keywords:
Modulation
Optoelectronics
Doping
Heterojunction
Communication channel
Materials science
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