Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition

Optical properties of ZnCdO/ZnO single quantum well (SQW) grown on c-sapphire substrate by pulsed laser deposition were investigated. Temperature dependent photoluminescence (PL) measurement was performed from 10 to 300 K to study the carrier localization effect and peak evolution. The LO-phonon replicas up to third order with Huang–Rhys factor of 0.17 were observed. The SQW exhibited very strong PL from the well layer and extremely weak emission from the ZnO barriers, indicating high quality interfaces and highly efficient relaxation.