Electronic properties of Si-doped Alx Ga1−xN with aluminum mole fractions above 80%

The dependence of the activation energy as well as the energetic levels of the neutral charge state and the DX center of the Si donor in Alx Ga1−xN:Si samples on aluminum content and SiH4/III ratio were investigated by electron paramagnetic resonance (EPR) measurements, Van-der-Pauw resistivity measurements, and Hall-effect measurements. It was found by EPR measurements that the energy distance of the neutral charge state of the Si donor from the conduction band increases with increasing aluminum content from 61 meV for x = 0.82 to 106 meV for x = 0.89. Additionally, the formation of a DX center below the neutral charge state which is deepening from 6 meV for x = 0.82 to 58 meV for x = 0.89 is observed. This results in a linearly increasing activation energy with increasing aluminum content from 67 meV for x = 0.82 to 164 meV for x = 0.89. This is consistent with the activation energies as determined by Hall-effect measurements showing a linear increase from 24 meV for x = 0.85 to 211 meV for x = 0.96, as...