Development of a Semiempirical Compact Model for DC/AC Cell Operation of ${\rm HfO}_{\rm{x}}$ -Based ReRAMs

A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfO x -based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOx-based ReRAM devices.