Effect of W doping on bipolar resistive switching behavior of TiN/W:NbO x /Pt device

In our study, resistive switching characteristics of TiN/ W:NbO x /Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbO x films. The W:NbO x specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbO x . It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbO x .