Nanocrystalline diamond pn-structure grown by Hot-Filament CVD

A rectifying nanocrystalline diamond (NCD) pn-structure has been grown by Hot-Filament CVD onto a large-area silicon substrate. N-type as well as p-type doping has been realized with this HFCVD process. IV-measurements at different temperatures show a diode behavior with an ideality factor of approximately n = 10 and a barrier height for current injection of approximately 0.76 eV. CV-plots show a dielectric barrier of 4.2 eV. This points towards a complex interface behavior, which is analysed on the basis of highly disordered materials.