Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H 3 PO 4 solution and Al 2 O 3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10 19 cm −3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.