Magnetron reactive ion etching for GaAs IC manufacturing technology

A report is presented on the development of magnetron-enhanced reactive ion etching (MIE) processes suitable for GaAs IC manufacturing technology. MIE is attractive for implementation in device fabrication efforts as it provides high etch rates and low residual damage. Processes for via hole etching and other applications, such as gate recess, are reported. Via etching was successfully accomplished with SiCl/sub 4/ and Cl/sub 2/. Control of side wall angle and selectivity was achieved through variation of process pressure. Processes suitable to etch fine device features were examined using two different plasmas, SiCl/sub 4/ and BCl/sub 3/. The residual damage to the wafer was assessed using transmission electron microscopy and Schottky diode characteristics. The damage was found to be extremely low for both etch gases. >