Transparent memory for transparent electronics

The present invention is a transparent electron as elements on a transparent memory for a transparent substrate, a lower transparent electrode layer formed in sequence on, comprising a data storage area and an upper transparent electrode layer formed in at least one transparent resistance-variable material layer, the transparent resistance-variable material layer, it has a switching characteristic in the resistance change according to the applied predetermined voltage between the lower transparent electrode layer and upper transparent electrode layer, an optical band gap (band-gap) at least 3 eV to not less than the visible light transmission of 80% transparent and clear the memory for an electronic device, such a high and very transparency by the present invention has a switching characteristic according to the change in resistance even at a low switching voltage also transparent resistance changes even after a long period of time has elapsed to maintain the switching characteristics of the resistance RAM that It can provide memory. The transparent resistance-variable material, a transparent, a transparent electrode, the transparent substrate, RRAM transparent memory.