OVERMOS — CMOS Hi-Res MAPS detectors for HEP applications

Abstract The OVERMOS project investigates the use of Monolithic Active Pixel Sensors, fabricated using a standard low voltage, high resistivity substrate 180 nm CMOS technology, for tracking and vertexing in HEP applications. Following a description of the main features of this CMOS technology, details will be given of the design of the OVERMOS test pixel structures, which include active pixels, with in-pixel RO electronics, and basic pixel arrays. Preliminary experimental results of fabricated test structures, which include charge collection, obtained using in-pixel laser injection, and comparison of performances before and after neutron irradiation will be shown. Results of 3D TCAD simulation related to charge collection and DC characteristics of the pixel structures will be also shown.