Ultra-high precision bandgap voltage reference using a novel current trimming technique

This paper presents design of an ultra-high precision bandgap voltage reference circuit in a 180nm BCDMOS 1P6M process. A novel current trimming technique is introduced to achieve high accuracy and low temperature coefficient. This bandgap voltage reference circuit achieves a low 17.1ppm temperature coefficient in measurement and 0.15% 3σ inaccuracy in simulation after trimming at 1.19V over temperature range of −40 to 125°C.