Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating.

In this work, we demonstrate high-performance indium–tin-oxide (ITO) transistors with a channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. An on-current of 0.243 A/mm...