Trap analysis of GaN-based heterostructures using current transients mesurements

This work deals with the trap analysis of the GaN-based structures using current time response on the voltage pulse applied to Schottky and ohmic contacts containing AlGaN and InAlN layers with different composition and thickness. Monitoring of the current time evolution for the investigated samples allows identifying and comparing particular traps. The analysis of the current transients measured at various temperatures via fitting up to four exponentials is used to resolve traps located in the particular layers and their activation energies were determined.