Study of Process Variability-Sensitive Local Device Parameters for 14-nm Bulk FinFETs
2020
In this paper we study the threshold voltage variability using the Pelgrom plot. The measurement data consists of drain current, output characteristics and threshold voltage for 14-nm FinFETs depending on their location on the silicon wafer. The results showed that the technology is mature with small mismatch and parameter variability.
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