Influence of packaging materials on GaN RF power devices

This paper describes the influence of different base plate materials on the electrical behavior of a RF GaN power device. Three different materials are tested and measured, first with a smaller device, then with a 36mm gate periphery AlGaN/GaN HEMT on SiC device, with an output power of 130W at L-band. The influence of the thermal conductance of each base plate material on the electrical performance of the devices is shown.