Annealing-temperature Dependent Characteristics of PLZT Thin Films on ITO Coated Glass

2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from to , dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 and Optical transmittance was decreased.