Effect of applied bias on Schottky interface to affect resistive switching in a memristive device

Resistive Random Access Memories (RRAMs) or Memristor has been a revolution in current nonvolatile memory technology. This work demonstrates an analytical model that shows the effect of applied bias on the metal-semiconductor interface to affect resistive switching of an RRAM device. The applied bias modulates the corresponding interface in terms of various interfacial electrical parameters. Besides, the change in bias affects the distribution of bulk defects primarily oxygen vacancies as well as non-lattice oxygen ions. This, in turn, also affects the corresponding resistance of bulk as well as other electrical parameters at the interface. Further conduction mechanism of the device with interfacial oxide formation as well as dissolution to impact resistive switching behavior has been elaborated.