The influence of post annealing on oxide charge-to-breakdown in tungsten polycide gate technology

Abstract The dependence of Q BD on the combined post annealing conditions of RTA and FA in the tungsten polycide gate technology has been experimentally investigated. In the case of RTA to be processed after FA, Q BD is controlled by the amount of fluorine diffused into the oxide, and then it is decreasing as increasing RTA temperature and time. However, in the vice-versa case, Q BD shows the poor characteristics because of the effect of lightly activated polysilicon. Based on these experimental results, the combined post annealing with FA/RTA sequence is useful to obtain the high Q BD performance.