Modeling challenges of advanced doping technologies

Ultra shallow junction with high activation is necessary to reduce source/drain resistance and enable continued device scaling. The adoption of non-planar device architectures also presents new doping profile engineering challenges due to the 3D nature of the channel and source/drain regions. Advanced doping technologies are emerging to meet the new USJ and profile engineering challenge. Due to the increasing process complexity and development cost, predictive TCAD modeling will be critical. The modeling challenges of the advanced doping technologies are discussed.