Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme

A perpendicular magnetic-tunnel-junction (MTJ)-based 2T-2R ternary content-addressable memory (TCAM) cell is proposed for a high-density nonvolatile word-parallel/bit-serial TCAM. The use of MOS/MTJ-hybrid logic makes it possible to implement a compact nonvolatile TCAM cell with 2.5 µm 2 of a cell size in a 0.14-µm CMOS and a 100-nm perpendicular-MTJ technologies. By reversed-current reading through the perpendicular MTJ device, tolerability of read disturb is greatly enhanced. Moreover, fine-grained power gating based on bit-level equality-search scheme achieves ultra-low activity rate of 4.1 % in a fabricated 72-bit × 128-word nonvolatile TCAM, which results in ultra-low active power and standby power.