Systematic Study of Grounded N-Well Latchup in 55nm Technology

Latchup behavior in parasitic SCR detector structures with grounded N-Well (GNW) were studied, wherein GNW implies N-Wells biased at 0 V. The impact of design parameters such as injector to detector spacing, GNW to nearby Nwell (of a PMOS) distance, and guard ring combinations on latchup robustness are discussed.