Structural peculiarities of disordered gallium antimonide produced by high-pressure rapid quenching from the liquid

Abstract The microstructure of bulk samples of GaSb, obtained by rapid quenching from the liquid, was investigated by scanning electron microscope (SEM) and by Raman scattering. The Raman data showed that some spots observed in the samples by SEM were Sb, thereby proving that partial decomposition of the originally homogeneous GaSb takes place under a particular temperature and pressure treatment.