Extraction ofCorrelated BaseandCollector Current RF NoiseSources inSiGeHBTs

A methodforextracting current noisede-embedding theextrinsic elements by two-port sources inSiGeHBTsisproposed inthisworkThe interconnections, where thesignal transfer andcorrelation basecurrent noise, collector current noise andtheirmatrices arecalculated step bystep(1). Ifthenodeinthe correlation areextracted afterremoving thenoiseequivalent circuit oftransistor increases, this technique contribution fromtheextrinsic elements ofdevices. We tends togetverycomplicated. Inthis work, wedevelop a simplify the extraction procedureby simplemethod toextract theintrinsic current noises inSiGeHBTs calculations ofthefour-port Y-parameters ofthe based onafour-port de-embedding theory, which wasused extrinsic circuit. Theproposed procedure prevents the forcalibrating thepadandinterconnect parasitics in complicated calculation throughrepeated two-portdevice-under-test (DUT)(3). A systematic procedure to noise circuit analysis. Thefour-port Y-parameters are extract thebasecurrent noise, collector current noise, and calculated through theuseofcorresponding operandstheir cross correlation directly fromtheS-parameter and following theirdefinition. Theproposed four-port RFnoise parameter measurement ispresented. Y-parameters calculation methodismucheasyto implement inthemathematic program. C