First demonstration of 60 GHz-f/sub t/ GaInP/GaAs HBT IC technology with 28 ps ECL gate delay

A fully integrated GaInP/GaAs HBT IC process with Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors is presented. The HBTs have an f T and f max of 60 and 45 GHz, respectively. Unloaded ECL gate delays of 28 ps are obtained from ring oscillator measurements. A divide-by-eight prescaler circuit clocks at 12-5 GHz