AMORPHIZATION OF SURFACE OXIDIZED LAYER OF SiC IN SiC_p/AlCOMPOSITE

The structures of SiO2 surface layer on the oxidized silicon carbide particles before and after compositing with aluminum matrix were studied by XRD and TEM. It is shown that the SiO, layer is crystalline when silicon carbide particles are oxidized at 1100℃ in air. It will be amorphized under the irradiation of high energy electron beam after being composited with aluminum matrix. The amorphization mechanism of the SiO2 layer was also discussed.