ALAMO: An Improvedσ-Space Based Methodology for Modeling Process Parameter Variations in Analog Circuits

This paper describes an original methodology for accurately modeling MOSFET process parameter variations. As compared to other process parameter variation modeling methods, the proposed methodology is capable of correctly modeling not only differences of process/model parameters, but also the process parameter variations for individual devices. This capability is very important for popular analog circuits like current biasing circuits, voltage reference circuits, and single-ended output amplifiers.