Low B2 crystallization temperature and high tunnel magnetoresistance in Co2FeAl/MgO/Co–FeCo2FeAl/MgO/Co–Fe magnetic tunnel junctions

We present tunnel magnetoresistance values of up to 147% at room temperature and 273% at 13 K for MgO-based magnetic tunnel junctions with Co2FeAlCo2FeAl and Co–Fe electrodes. The magnetic moment and coercive field were examined as a function of the annealing temperature by alternating gradient magnetometer investigations. This is compared with X-ray diffraction studies of the same samples and all results are contrasted to similar layer stacks based on the Heusler compound Co2MnSiCo2MnSi.