Electric field effect on the nonlinear optical rectification properties in III–V nitrides semi-parabolic quantum well

By using the compact-density-matrix approach and iterative procedure, a detailed procedure for the calculation of the optical rectification (OR) tensor is given in the electric-field-biased semi-parabolic quantum wells (QW's). The simple analytical formula for the OR coefficient in the systems is also deduced. By adopting the methods of envelope wave function and the displaced harmonic oscillator approach, the electronic states in semi-parabolic QW's with applied electric fields are exactly solved. Numerical results on typical AlxGa1-xN/GaN materials show that, nonlinear OR coefficient is strongly affected only by the confinement frequency ω0, the applied electric field. Moreover, OR also sensitively depends on the relaxation rate of the systems.