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Effect of residual radiation-induced defects on characteristics of ion-implanted gallium arsenide p-n junctions
Effect of residual radiation-induced defects on characteristics of ion-implanted gallium arsenide p-n junctions
1978
B. S. Azikov
V. N. Brudnyi
A. P. Vyatkin
M. A. Krivov
V. M. Lupin
L. L. Shirokov
Keywords:
Atomic physics
Arsenide
Ion implantation
Gallium
Physics
Gallium arsenide
Residual
Ion
Radiation
radiation induced
Correction
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