Photoelectrochemical capacitance-voltage measurements in GaN

Photoelectrochemical etching of GaN, using a KOH solution and a 325 nm wavelength UV laser, has been used to obtain carrier concentration depth profiles. The photoelectrochemical capacitance-voltage measurements are supported with conventional depletion mode capacitance-voltage, secondary ion mass spectroscopy, and Hall measurements. The data show that steps in carrier concentration profiles can be accurately reproduced.