Old Web
English
Sign In
Acemap
>
Paper
>
Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process
Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process
2007
Rodríguez
Rémack
Gertas
Boku
Udayakumar
Summerfelt
Shinn
Madan
McAdams
Moise
Eliason
Bailey
Depner
Kim
Staubs
Keywords:
Reliability (semiconductor)
Electronic engineering
Ferroelectricity
random access memory
cmos process
Computer science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]