Electrical and optical properties of a-Si:H, a-SiGe:H and a-SiSn:H deposited by magnetron assisted silane decomposition

Electrical and optical properties of a-Si:H, a-SiGe:H and SiSn:H deposited by magnetron assisted silane decomposition (MASD) are reported. The photo to dark conductivity ratio for the a-SiGe:H films is shown to be close to the best results obtained by PECVD reaching near 10 4 for 1.55 eV optical bandgap.