Old Web
English
Sign In
Acemap
>
Paper
>
Etude par simulation d’un transistor HEMT à base de AlGaN/GaN.
Etude par simulation d’un transistor HEMT à base de AlGaN/GaN.
2013
Abdelmalek Douara
Bouaza Djellouli
Keywords:
Transistor
High-electron-mobility transistor
Electrical engineering
Electronic engineering
Materials science
Optoelectronics
algan gan
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]