Metalization complex and semiconductor device

PURPOSE: To provide a method for connecting a chip on a silicon wafer to a substrate, while using a solder contact. CONSTITUTION: A metalization complex 6 is composed of a high melting point metal 16, nickel 18 and copper 20. It is preferable that the high meeting point metal be titanium(Ti), but any other suitable high melting point metal such as zirconium or hafnium may be used as well. A metal may be added to the copper, as needed. This metalization complex is used for connecting a solder contact 22 to a semiconductor wafer 10.