Low Drive-Current and Wide Temperature Operation of 1.3-μm AlGaInAs-MQW BH-DFB Lasers by Laterally Enhanced Cladding Layer Growth

Low drive-current and extremely wide temperature (from -45 to 105°C) operation were demonstrated in 10-Gb/s directly-modulated 1.3-μm AlGalnAs-MQW BH-DFB lasers with a new DH structure having a p-InP cladding layer grown by a lateral-growth technique.