Palladium/titanium dioxide/silicon dioxide/silicon heterojunction-based hydrogen detector

The invention specifically provides a high-performance hydrogen detector, which takes a silicon dioxide-covered silicon wafer as a substrate, takes a titanium dioxide semiconductor as a base material, and takes palladium as a catalytic layer. First, a titanium dioxide film is grown on the silicon dioxide-covered silicon substrate by utilizing a radio frequency magnetron sputtering method; and then, a palladium catalytic layer of which the area is smaller than that of the titanium dioxide film is prepared on the film surface by a mask and a direct-current magnetron sputtering method. A palladium/titanium dioxide/silicon dioxide/silicon heterojunction-based hydrogen detector which is disclosed by the invention and utilizes the catalytic effect of the palladium film and the amplification effect of a titanium dioxide/silicon dioxide/silicon heterojunction is simple in process and low in cost, does not need a heater, can work at room temperature, has the characteristics of high sensitivity and short response and recover time, has good detection performance on hydrogen and has an important application prospect.