GaAs MOS Structures

Anodized Ta203/native oxide/n-type (111)B GaAs MOS devices are evaluated using variable frequency capac-itance and conductance measurements. Total movement of the Fermi level is seen restricted to .42 eV by an interface state distribution having a minimum density of 3.5 X 1012 eV-1 cm-2 at .84 eV from the conduction band. The anomalous frequency dispersion of the accumulation capacitance, lack of strong inversion and loss mechanisms are discussed. Pulsed deep depletion characteristics and long storage times are observed. Due to the chemically stable nature of the anodized Ta overlayer, linear array burried channel GaAs MOS charge transfer devices were fabricated.© (1979) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.