HgCdTe based PEM detector for middle range of IR spectrum

The calculation of dependence photoelectric parameters of the uncooled photoelectromagnetic (PEM) detector of infrared range of spectrum on the basis of monocrystals Cd x Hg 1-x Te (x=0,2) from the level of an acceptor doping of semiconductor material was carried out. It is shown that the optimum acceptor doping allows to increase essentially both the voltage response and specific detectivity of photodetector. The modified construction of the PEM detector permitting to increase more its voltage response is represented. The photoelectric parameters of manufactured PEM detector for middle range of IR-spectrum of 3-7 μm with a maximum of responsivity near 6 μm are given.