Investigation of Hot carrier Degradation in Grooved Channel Structure nMOSFETs: Sphere shaped Recess Cell Array Transistor (SRCAT)

In this paper, first, it has been discussed hot carrier reliability in both Pch, RCAT and SRCAT. Second, we showed the origin of electric field suppression where the supply-voltage is applied at the same bias condition. Furthermore, we discuss the effects of ion implant process