Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy

We fabricated single-, double- and triple-layered β-FeSi2-particles structure on Si(001) substrates by reactive deposition epitaxy (RDE) for β-FeSi2 and by molecular beam epitaxy (MBE) for Si, and realized electroluminescence (EL) at 310 K. Photoluminescence (PL) measurements revealed that the 77 K PL intensity of β-FeSi2 increased almost proportionally with the number of β-FeSi2-particles/Si layers. It was also found that the multilayered structure enhanced the EL intensity of β-FeSi2 particularly at low temperatures.